| 标题 |
Enhancement-mode GaN p-FET with p-NiO/p-GaN heterojunction gate featuring improved threshold voltage stability and channel conductivity based on low interface trap density |
| 网址 | |
| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Jinbing Wang; Maojun Wang; Pengfei Wang; Jin Wei; Jinyan Wang; et al 出版日期:2026-04-30 |
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(2025-6-4)