| 标题 |
6.5 kV SiC p‑Channel IGBT With Enhanced Injection Efficiency and Reduced On‑State Voltage |
| 网址 | |
| DOI |
10.1109/TED.2025.3502145
doi
|
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)