记忆电阻器
部分
材料科学
控制重构
分子
分子内力
分子间力
纳米技术
化学物理
石墨烯
基质(水族馆)
电场
计算机科学
物理
化学
量子力学
立体化学
海洋学
地质学
嵌入式系统
作者
Yilin Guo,Chen Yang,Shuyao Zhou,Zhirong Liu,Xuefeng Guo
标识
DOI:10.1002/adma.202204827
摘要
Abstract A robust single‐molecule memristor is prepared by covalently integrating one phenol molecule with multiple binding sites into nanogapped graphene electrodes. Multilevel resistance switching is realized by the electric‐field‐manipulated reconfiguration of the acyl moiety on the phenol center, that is, the Fries rearrangement. In situ measurements of the reaction trajectories with an initial single substrate and an intermediate break through the limitation of macroscopic experiments, therefore unveiling both intramolecular and intermolecular mechanistic pathways (a long‐term controversy) as well as comprehensive dynamic information. Based on this advance, high‐performance single‐molecule memristors in both the solution and solid states are achieved successively, providing a new understanding of memristive systems and neural network computing.
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