纳米线
热离子发射
肖特基二极管
材料科学
肖特基势垒
光电子学
量子隧道
半导体
金属半导体结
二极管
凝聚态物理
电流密度
纳米技术
电子
物理
量子力学
作者
Zhiyong Zhang,C. H. Jin,Xuelei Liang,Qing Chen,Lian‐Mao Peng
摘要
Electrical transport measurements were conducted on semiconducting nanowires and three distinct current-voltage (I-V) characteristics were observed, i.e., almost symmetric, almost rectifying, and almost linear. These I-V characteristics were modeled by treating the transport in the nanowire as in a metal-semiconductor-metal structure involving two Schottky barriers and a resistor in between these barriers, and the transport is shown to be dominated by the reverse-biased Schottky barrier under low bias and by the semiconducting nanowire at large bias. In contrast to the conventional Schottky diode, the reverse current in the nano-Schottky barrier structure is not negligible and the current is largely tunneling rather than thermionic. Experimental I-V curves are reproduced very well using our model, and a method for extracting nanowire resistance, electron density, and mobility is proposed and applied to ZnO, CdS, and Bi2S3 nanowires.
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