Ambient Energy Harvesting of Piezoelectric ZnO Thin Film Dependence of Spin Speed and Annealing Temperature

材料科学 退火(玻璃) 旋涂 薄膜 光致发光 溶胶凝胶 分析化学(期刊) 扫描电子显微镜 带隙 光谱学 粒度 能量色散X射线光谱学 复合材料 光电子学 纳米技术 冶金 化学 量子力学 物理 色谱法
作者
Agus Geter Edy Sutjipto,Yit Pei Shian,Ali Shaitir,Mohamad Ashry Jusoh,Ari Legowo
出处
期刊:Materials Science Forum 卷期号:981: 51-58
标识
DOI:10.4028/www.scientific.net/msf.981.51
摘要

This research deals with ambient energy harvesting by using zinc oxide thin film. The objectives of this thesis are to prove the ZnO film as a piezoelectric material can produce electric when vibration is applied and determine its optimal voltage. The thesis describes the sol gel spin coating technique to fabricate zinc oxide thin film. Zinc acetate dehydrate, absolute ethanol and diethanolamine were used in this thesis to act as sol gel precursor. Sol gel was coated on glass slide which wrapped by aluminum foil. The thin film was formed after preheating and annealing. The thin film was characterized by X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Photoluminescence spectroscopy (PL) and Ultraviolet-visible spectroscopy (UV-Vis) as well as analyzed using vibration technique. From XRD results, the films were preferentially diffracted at around 65° which corresponding to (1 1 2) diffraction phase. From FESEM results, it was observed that when the spin speed was increased at same annealing temperature, the thickness was also decreased. When the annealing temperature was increased at same spin speed, both grain size and thickness were increased. From the PL results, there was only film with spin speed of 2000 rpm and annealing temperature of 300 °C had slightly left wavelength which was 380 nm. Annealing temperature would affect only the intensity of PL wavelength. From the results of UV-Vis, it was observed that when the spin speed was increased at same annealing temperature, the band gap was decreased. When the annealing temperature was increased at same spin speed, the band gap was decreased. Piezoelectric test had proven the ZnO film could produce electricity. The maximum voltage (20.7 mV) was produced by the ZnO film with spin speed of 2000 rpm and annealing temperature of 300 °C.
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