消耗品
薄脆饼
还原(数学)
材料科学
毯子
工艺工程
工程物理
计算机科学
纳米技术
复合材料
工程类
几何学
化学
数学
物理化学
作者
Wei‐Tsu Tseng,Carol Boye,Claire Silvestre,James H.-C. Chen,Fee Li Lie,D. Canaperi
标识
DOI:10.1109/asmc51741.2021.9435652
摘要
An exponential correlation is found to exist between the number of added defects on polished blanket wafers and the inverse of defect size for particulate CMP defects. Smaller surface defects are much more abundant and more difficult to remove. Pad surface pore geometry can influence the transport of debris during polish, and hence modulate the generation of defects such as polish residue (PR), foreign materials (FM), and scratches. The conditioner and conditioning process also plays a role. Besides the selection and optimization of cleaning chemical and post cleaning process itself, overall CMP defect reduction and mitigation must take into account the events and consumables in the polish modules. The drive towards finer and 3D device geometry presents further challenges in defect detection and reduction.
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