Optimizing Optoelectronic Properties of CsPbI3 Perovskite Films through Control of Thickness and Bulk Defect Density

Recent studies have investigated the effects of varying the thickness and bulk defect density of CsPbI 3 perovskite films on their optoelectronic properties. It has been found that as the thickness of the perovskite layer increases from 50 to 500 nm, the absorption coefficient decreases, resulting in a reduction in the overall efficiency of solar cells. Furthermore, thicker films have been observed to exhibit a higher density of defects and trap states, which can decrease the charge carrier mobility and increase recombination rates, leading to a further decrease in device performance. On the other hand, by controlling the bulk defect density within the range of 10 ¹⁴ to 10 ¹⁸ , it is possible to optimize the properties of the CsPbI 3 perovskite material. A lower bulk defect density has been found to enhance the stability of the material and reduce the formation of trap states, resulting in a higher efficiency of the device. Overall, the results suggest that controlling the thickness and bulk defect density of CsPbI 3 perovskite films is crucial for achieving optimal device performance.