Surface Growth Morphology of (0001) Si-face of 6H-SiC Single Crystal

Surface growth morphology of (0001) Si-face of 6H-SiC single crystal grown by sublimation was observed by optical microscopy in the reflection mode. The growth step height was determined by using surface profiler. Rhythmic bunching phenomena of the growth step was observed, its terrace width between the growth steps is approximately 80μm and the growth step height ranges from 20 to 50nm. A micro-spiral that lies on the large terrace was also observed. In the periphery region of 6H-SiC single crystal, the dense growth steps have big step heights of 300 to 700nm and small terrace width of 2 to 5μm, approximately. The growth step in the development process is affected by micropipe defect in the single crystal, and the growth step around micropipe is tortuous.