MOSFET
平面的
放大器
物理
感应(电子)
光电子学
电压
材料科学
计算机科学
电气工程
晶体管
CMOS芯片
工程类
量子力学
计算机图形学(图像)
作者
Hyoungjun Na,Tetsuo Endoh
标识
DOI:10.1587/transele.e96.c.655
摘要
In this paper, a high performance current latch sense amplifier (CLSA) with vertical MOSFET is proposed, and its performances are investigated. The proposed CLSA with the vertical MOSFET realizes a 11% faster sensing time with about 3% smaller current consumption relative to the conventional CLSA with the planar MOSFET. Moreover, the proposed CLSA with the vertical MOSFET achieves an 1.11dB increased voltage gain G(f) relative to the conventional CLSA with the planar MOSFET. Furthermore, the proposed CLSA realizes up to about 1.7% larger yield than the conventional CLSA, and its circuit area is 42% smaller than the conventional CLSA.
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