拓扑绝缘体
自旋电子学
自旋极化
凝聚态物理
表面状态
带隙
物理
极化(电化学)
材料科学
电子
化学
曲面(拓扑)
量子力学
铁磁性
几何学
数学
物理化学
作者
Polina M. Sheverdyaeva,Conor Hogan,Gustav Bihlmayer,Jun Fujii,I. Vobornik,Matteo Jugovac,Asish K. Kundu,Sandra Gardonio,Zipporah Rini Benher,Giovanni Di Santo,Sara Gonzalez,L. Petaccia,C. Carbone,Paolo Moras
出处
期刊:Nano Letters
[American Chemical Society]
日期:2023-07-17
卷期号:23 (14): 6277-6283
被引量:5
标识
DOI:10.1021/acs.nanolett.3c00153
摘要
Topological insulators are bulk insulators with metallic and fully spin-polarized surface states displaying Dirac-like band dispersion. Due to spin-momentum locking, these topological surface states (TSSs) have a predominant in-plane spin polarization in the bulk fundamental gap. Here, we show by spin-resolved photoemission spectroscopy that the TSS of a topological insulator interfaced with an antimonene bilayer exhibits nearly full out-of-plane spin polarization within the substrate gap. We connect this phenomenon to a symmetry-protected band crossing of the spin-polarized surface states. The nearly full out-of-plane spin polarization of the TSS occurs along a continuous path in the energy-momentum space, and the spin polarization within the gap can be reversibly tuned from nearly full out-of-plane to nearly full in-plane by electron doping. These findings pave the way to advanced spintronics applications that exploit the giant out-of-plane spin polarization of TSSs.
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