Subquantum conductive-bridge memory

Resistive memory devices suffer from a tradeoff between operating current and data retention. The key parameter governing this tradeoff is shown to be the 1-atom conductance of the filament material. High 1-atom conductances, comparable to the quantum G0=2e2/h, are shown to make metal filaments unsuitable for low-power applications. Instead by using filaments containing Te, a semiconductor whose 1-atom conductance is deduced to be just 0.03G0, it is shown that operating currents can be reduced by an order of magnitude compared to metals. Such “subquantum” conductive-bridge memory cells are broadly applicable to low-power applications.