Light-induced switch based on edge modes in irradiated thin topological insulators

Abstract We investigate transport properties through the nano-ribbons of thin topological insulators irradiated by circularly polarized light in a high-frequency regime. It is demonstrated that pseudo-spin polarized edge modes appearing in the bulk band gap are responsible for the current flowing through this nano-junction whose localization on the top and bottom edges depend strongly on the polarization of light. Based on these edge modes, one can design a light-induced switch with a desirable on/off ratio of the current whose off-state is engineered by dividing the scattering region into two parts. Each part is irradiated by the light with opposite polarization in respect to the other one. This off-state arises from the quantum blocking of transition between two edge modes with opposite pseudo-spin polarization induced by irradiation. The local current on each bond shows how the current passes through the edges and jumps to the opposite edge. Furthermore, some other nano-junctions are proposed as a light-induced switch which are designed based on the gap opening induced by the perpendicular magnetization or structural inversion asymmetry.