响应度
异质结
光电探测器
材料科学
光电子学
量子点
硫化物
六方氮化硼
纳米技术
石墨烯
冶金
作者
Haiting Zhang,Hongwen Li,Hua Yu,Fuguo Wang,Xiaoxian Song,Ze Xu,Dongdong Wei,Jingjing Zhang,Zijie Dai,Yunpeng Ren,Yunxia Ye,Xudong Ren,Jianquan Yao
标识
DOI:10.1016/j.matlet.2022.133037
摘要
Photodetectors made of single Selenium sulfide (SnS2) or Silver sulfide (Ag2S) are difficult to achieve superiority in performance. Therefore, it is a good idea to prepare SnS2/Ag2S heterojunctions on hexagonal boron nitride (hBN). The responsivity (R) of SnS2/Ag2S photodetector under 405 nm laser is 4.52 A/W, the specific detectivity (D*) is 3.53 × 1011 Jones and the response speed reaches 37/50 ms. Ag2S quantum dots (QDs) overcome the problem of easy recombination of photogenerated carriers in SnS2. This makes the R of SnS2/Ag2S photodetectors about three orders of magnitude higher than that of Ag2S or SnS2 devices.
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