轨道能级差
材料科学
兴奋剂
单层
接受者
分子轨道
带隙
化学物理
吸附
硒化物
分子
凝聚态物理
纳米技术
化学
光电子学
物理化学
有机化学
物理
硒
冶金
作者
Yujie Zheng,Qi Zhang,Omololu Odunmbaku,Zeping Ou,Meng Li,Kuan Sun
标识
DOI:10.1088/1361-648x/ac3691
摘要
Utilizing first-principles calculations, charge transfer doping process of single layer tin selenide (SL-SnSe) via the surface adsorption of various organic molecules was investigated. Effective p-type SnSe, with carrier concentration exceeding 3.59×1013cm-2, was obtained upon adsorption of tetracyanoquinodimethane (TCNQ) or 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4TCNQ) on SL-SnSe due to their lowest unoccupied molecular orbital (LUMO) acting as shallow acceptor states. While we could not obtain effective n-type SnSe through adsorption of tetrathiafulvalene (TTF) or 1,4,5,8-tetrathianaphthalene (TTN) on pristine SnSe due to their highest occupied molecular orbitals (HOMO) being far from the conduction band edge of SnSe, this disadvantageous situation can be amended by the introduction of an external electric field perpendicular to the monolayer surface. It is found that Snvac will facilitate charge transfer from TTF to SnSe through introducing an unoccupied gap state just above the HOMO of TTF, thereby partially compensating for the p-type doping effect of Snvac. Our results show that both effective p-type and n-type SnSe can be obtained and tuned by charge transfer doping, which is necessary to promote its applications in nanoelectronics, thermoelectrics and optoelectronics.
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