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自觉的静竹
Lv4
520 积分
2023-05-23 加入
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Characteristics of high-order silane based Si and SiGe epitaxial growth under 600 ℃
19天前
已完结
Highly selective isotropic chemical dry etching for gate-all-around devices: nanosheet, forksheet and complementary FETs
19天前
已关闭
Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond
19天前
已完结
Progress Toward Superconductor Electronics Fabrication Process With Planarized NbN and NbN/Nb Layers
26天前
已关闭
Design and Fabrication of Low-Power Single-Flux-Quantum Circuits Toward Quantum Bit Control
27天前
已完结
Development of Self-Shunted Josephson Junctions for a Ten-Superconductor-Layer Fabrication Process: Nb/NbNx/Nb Junctions
27天前
已完结
Analytical Model of Contact Resistance in Vertically Stacked Nanosheet FETs for Sub-3-nm Technology Node
2个月前
已完结
Reliability Assessment of 3nm GAA Logic Technology Featuring Multi-Bridge-Channel FETs
2个月前
已完结
Sub-10 nm gate-all-around CMOS nanowire transistors on bulk Si substrate
2个月前
已完结
World’s First GAA 3nm Foundry platform Technology (SF3) with Novel Multi-Bridge-Channel-FET (MBCFET™) Process
2个月前
已完结
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