| 期刊全称 | IEEE Transactions on Device and Materials Reliability | |||||||||||||||||||||||||||||||||||||||
| 期刊缩写 | IEEE Trans. Device Mater. Reliab. | |||||||||||||||||||||||||||||||||||||||
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涉及主题
（科研通AI识别） |
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| 期刊介绍 | The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products. | |||||||||||||||||||||||||||||||||||||||
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| 期刊ISSN | print: 1530-4388 | |||||||||||||||||||||||||||||||||||||||
| 2025最新影响因子 (2025年6月18日公布) 与上一年的差值 |
2.3↓ 0.2 | |||||||||||||||||||||||||||||||||||||||
| 历年影响因子 |
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| 历年发表/被引量 （科研通AI通过大数据分析） 最后更新日期：2026-04-26 |
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| h-index（2021） | 63 | |||||||||||||||||||||||||||||||||||||||
| 自引率 | 4.00% | |||||||||||||||||||||||||||||||||||||||
| 涉及的研究领域 | 工程技术-工程：电子与电气 | |||||||||||||||||||||||||||||||||||||||
| 2026年新锐分区 （2026年3月24日发布） |
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| 中科院2025年分区 （2025年3月20日发布） |
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| WOS期刊分区 （2025年6月18日公布） |
JCR学科分类
JCI学科分类
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| 中科院2024年分区 （2023年12月27日发布） |
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| 中科院《国际期刊预警名单（试行）》名单 |
2024年02月发布的2024版：不在预警名单中 2023年01月发布的2023版：不在预警名单中 2021年12月发布的2021版：不在预警名单中 2021年01月发布的2020版：不在预警名单中 |
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| 期刊主页 |
（系统检测到多个链接，仅供参考，如有错误，请通过页面底部反馈） |
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| 投稿网址 | http://mc.manuscriptcentral.com/tdmr | |||||||||||||||||||||||||||||||||||||||
| 编辑部地址 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141 | |||||||||||||||||||||||||||||||||||||||
| 出版商 | Institute of Electrical and Electronics Engineers Inc. | |||||||||||||||||||||||||||||||||||||||
| 出版国家（地区） | UNITED STATES | |||||||||||||||||||||||||||||||||||||||
| 出版语言 | English | |||||||||||||||||||||||||||||||||||||||
| 出版周期 | Quarterly | |||||||||||||||||||||||||||||||||||||||
| 每年出版文章数 | 80 | |||||||||||||||||||||||||||||||||||||||
| Gold OA文章占比 | 24.52% | |||||||||||||||||||||||||||||||||||||||
| 原创研究文献占比 （排除综述） |
98.21% | |||||||||||||||||||||||||||||||||||||||
| SCI收录类型 |
Science Citation Index Expanded (SCIE) Scopus (CiteScore) |
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| PubMed链接 | http://www.ncbi.nlm.nih.gov/nlmcatalog?term=1530-4388%5BISSN%5D | |||||||||||||||||||||||||||||||||||||||
| 平均审稿周期 | 网友分享经验： 较慢,6-12周 |
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| 平均录用比例 | 网友分享经验： 较易 |
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| 相关链接 |
您可以在上述网站查看该期刊的网友互动，及期刊影响力的其它指标。
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