Lv3
258 积分 2022-09-03 加入
First-principles study of metal-semiconductor contacts and quantum transport simulations for 5.1-nm monolayer MoSi2N4 devices
8天前
已完结
Geometrical stability, electrical properties, and device applications of various MoSi2N4 derivatives and their heterojunctions
8天前
已完结
Modulation of interfacial Schottky barrier of In2Se3/Ti3C2X2 (X=Cl; F; O; OH) ferroelectric heterostructure
1个月前
已关闭
Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene
2个月前
已完结
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