Lv3
300 积分 2021-06-01 加入
Distribution of the electrical resistivity of a n-type 4H-SiC crystal
18天前
已完结
The Numerical Simulations and Experimental Study of an 8-Inch SiC Single Crystal with Reduced BPD Density
18天前
已完结
Dislocations in 4H-SiC epilayers for power devices: Identification, formation, and regulation
18天前
已完结
Micropipe-Like Defects in the Expanded Diameter Region of 8 in. SiC Grown by Physical Vapor Transport
18天前
已完结
Origins and characterization techniques of stress in SiC crystals: A review
19天前
已完结
Real Structure of LiB3O5 (LBO) Crystals Grown in Li2O‐B2O3‐MoO3 System
2个月前
已完结
Comparative study of methods for counting of dislocations in 4H-SiC
2个月前
已完结
Correlation between etch pits formed by molten KOH+Na2O2 etching and dislocation types in heavily doped n+-4H–SiC studied by X-ray topography
2个月前
已完结
Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer
2个月前
已完结
Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method
2个月前
已完结
皖公网安备34019202002308
