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340 积分 2021-06-01 加入
Micropipe-Like Defects in the Expanded Diameter Region of 8 in. SiC Grown by Physical Vapor Transport
5小时前
待确认
Effects of the thermal field on the diameter enlargement of 200 mm SiC by PVT method
1天前
已完结
Optimization of the Thermal Field of 8-Inch Sic Crystal Growth by Pvt Method with “3 Separation Heater Method”
12天前
已完结
Interfacial stress concentration and dislocation generation within 4H-SiC driven by carbon inclusions: insights from experimental and molecular dynamics
15天前
已完结
Nucleation of Dislocations from Scratches on the Surface of PVT-Grown 4H-SiC Wafers
19天前
已完结
Rapid Growth of SiC single crystals using CVD-SiC block sources via sublimation method
21天前
已完结
Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers
24天前
已完结
Effect of subsurface damages in the seed crystal on the crystal quality of 4H-SiC single crystals grown by the PVT technology
24天前
已完结
Atmospheric Plasma Etching-Assisted Chemical Mechanical Polishing for 4H-SiC: Parameter Optimization and Surface Mechanism Analysis
24天前
已完结
Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates
30天前
已完结
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