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Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD
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Atomic oxygen recombination at the wall in a time afterglow
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Atomic oxygen recombination at the wall in a time afterglow
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Kinetics of Thermal Decomposition of Group-Hi Metal Alkyls on GaAs(100)
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first_pagesettingsOrder Article Reprints Open AccessReview MOCVD Growth of Next-Generation III–V Semiconductor Devices: In Review
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Numerical Simulation of Thermal Performance of GaAs-MOCVD Reactor Based on 36 × 4 inches’ Wafers
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Influence of in situ HCl gas cleaning on n/p-type GaAs and AlGaAs regrown interfaces in MOCVD
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Ex situ dry cleaning of reactor component of nitride metal organic chemical vapor deposition using chlorinated gases
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A perspective of GaAs//Si tandem photovoltaic cell: Architecture, fabrication, and performance
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Machine learning models in the process of metal organic chemical vapor deposition epitaxial manufacturing of Gallium Arsenide
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