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80 积分 2025-10-23 加入
Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness
2个月前
已完结
Irradiation Hardened p-GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV⋅cm2/mg and 95% Conversion Efficiency at 300 W/500 kHz
2个月前
已完结
800-V Irradiation-Hardened Device Technology on GaN-on-SiC Power Integration Platform
2个月前
已完结
Wider SOA SGT MOSFET With Self-Adjusting Negative Feedback by Patterning the Varied Resistance of Source
4个月前
已完结
Current Sharing in Trench MOSFETs During Fast Switching Transients
4个月前
已完结
A Split-Gate Power MOSFET Obtaining Ultra-Wide SOA Based on Time-Shared and Partitioned Conduction Gate Control
8个月前
已完结
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