Lv11
32 积分 2026-05-21 加入
Effect and mechanism of oxidant on alkaline chemical mechanical polishing of gallium nitride thin films
3分钟前
待确认
Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate
5分钟前
已完结
Effect of Polishing Parameters on Chemical Mechanical Planarization of C-Plane (0001) Gallium Nitride Surface Using SiO2 and Al2O3 Abrasives
16分钟前
已完结
Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with different abrasives
1小时前
已完结
Anisotropy dependence of material removal and deformation mechanisms during nanoscratch of gallium nitride single crystals on (0001) plane
1个月前
已完结
Simultaneous Growth of Four GaN Crystal Sheets Using the Na-Flux Liquid-Phase Epitaxial Method: Under Different Solution Heights
1个月前
已完结
皖公网安备34019202002308
