Lv1
50 积分 2022-03-20 加入
Characteristics of AlGaAs in the laser structure of (Al)GaAs/AlGaAs multilayer epitaxy grown by MOCVD
4个月前
已完结
AlInGaAs/InP 1.55 μm high-index-contrast circular beam edge-emitting semiconductor lasers
5个月前
已完结
Enhancing the electrical and optical performance of AlGaInP-based red micro-LEDs with passivation materials
5个月前
已完结
Epitaxial analysis of GaInP/AlGaInP red light-emitting diodes with ternary AlGaP quantum barriers for quantum efficiency enhancement
5个月前
已完结
Inhomogeneous Barrier Height Characteristics of n-Type AlInP for Red AlGaInP-Based Light-Emitting Diodes
5个月前
已完结
Driving up the quality of metal organic chemical vapor deposition-grown epitaxial wafers for highly innovative photonic applications
6个月前
已完结
A Comprehensive Overview of HEMT Structure and Fabrication Techniques
7个月前
已完结
Semi-insulating InP:Fe growth by hydride vapor phase epitaxy for advanced buried heterostructure quantum cascade lasers
9个月前
已完结
Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs
9个月前
已完结
Effects of Zn diffusion in tunnel junction and its solution for high efficiency large area flexible GaInP/GaAs/InGaAs tandem solar cell
10个月前
已关闭
皖公网安备34019202002308
