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biog12
Lv1
90 积分
2022-03-20 加入
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Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks
20天前
已完结
Cutting-edge single wafer MOCVD technology enabling advanced nitride applications with high performance
30天前
已关闭
Materials aspects of GaAs and InP based structures
4个月前
已关闭
The Control of Leading Edge Effects in the OMVPE Growth of InGaAsP
5个月前
已关闭
Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996
5个月前
已关闭
Nondestructive Evaluation of Detuned Wavelength for As-Grown VCSEL Epi-Wafer
6个月前
已完结
Enabling GaN based MicroLEDs using leading-edge single wafer MOCVD technology (Conference Presentation)
7个月前
已完结
Effect of Substrate Surface Finish and Proximity Distance on Compositional Shift of InGaAsP Metal–Organic Vapor Phase Epitaxy in a High-Speed-Rotation Multiple-Substrate Reactor
7个月前
已完结
Highly Reliable 106 Gb/s PAM-4 850 nm Multi-Mode VCSEL for 800G Ethernet Applications
7个月前
已完结
InGaAsP/InP multiquantum-well structure grown by MOCVD
9个月前
已完结
没有进行任何应助
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7个月前
已找到【积分已退回】
2年前
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2年前
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2年前
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2年前
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