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20 积分 2026-03-12 加入
Study on the interface electronic structure, strain modulation and transport properties of composite heterojunction of 2D semimetal TiS2 and MX2 (M=Mo, W, Cr, Zr, Hf; X=S, Se, Te) semiconductor
2个月前
已完结
First-Principles Study of the Schottky Contact, Tunneling Probability, and Optical Properties of MX/TiB4 Heterojunctions (M = Ge, Sn; X = S, Se, Te): Strain Engineering Tunability
2个月前
已完结
Above-room-temperature strong intrinsic ferromagnetism in 2D van der Waals Fe3GaTe2 with large perpendicular magnetic anisotropy
2个月前
已完结
Goldene: A promising electrode for achieving ultra-low Schottky contact in metal–semiconductor Goldene/MX2 (M = Mo, W; X = S, Se) heterostructure
2个月前
已完结