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20 积分 2026-06-21 加入
The ALD Films of Al2O3, SiNx, and SiON as Passivation Coatings in AlGaN/GaN HEMT
4小时前
待确认
Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride
4小时前
已完结
Electric-field modulation for high-voltage AlGaN/GaN HEMTs: interface engineering, field plates, and RESURF
1个月前
已完结
The trade-off between electrical performance and structural quality in silicon (n-type) and magnesium (p-type)-doped a-plane gallium nitride (GaN) on r-plane sapphire
1个月前
已完结
Origin of threshold voltage instability in vertical GaN trench MOSFETs characterized by charge pumping
2个月前
已完结
Impact of bond rupture dynamics at polar and non-polar interfaces on time-dependent dielectric breakdown (TDDB) of GaN FinFETs
2个月前
已完结
Origin of threshold voltage instability in vertical GaN trench MOSFETs characterized by charge pumping
2个月前
已完结
Study of interface trap density of AlOxNy/GaN MOS structures
2个月前
已完结
Study of interface trap density of AlOxNy/GaN MOS structures
2个月前
已完结
Mitochondrial Spermidine Synthase is Essential for Blood-stage growth of the Malaria Parasite
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