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70 积分 2025-12-15 加入
Optimization of 1.2 kV 4H-SiC MOSFETs with Vertical Variation Doping Structure
4天前
已完结
Optimization of 1.2 kV 4H-SiC MOSFETs with Vertical Variation Doping Structure
4天前
已关闭
A Novel 4H-SiC/Diamond SuperJunction MOSFET With Self-Driving Electron Accumulation Layer Realizing Extremely Low Ron,sp
11天前
已完结
High-performance SiC superjunction MOSFET with integrated high-k MOS channel diode for optimized switching characteristics and high-temperature robustness
1个月前
已关闭
Superjunction IGBT with split carrier storage layer
2个月前
已完结
Overview of IGBT Driving Technology for High Voltage and High Capacity Applications
2个月前
已完结
Enhanced VDMOS design with reduced parasitic effect
2个月前
已完结
Analysis of TID Effects on the Threshold Voltage and Breakdown Voltage of 100-V Split-Gate Trench VDMOS
2个月前
已完结
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