Lv21
190 积分 2024-05-07 加入
Robust epitaxy of single-crystal transition-metal dichalcogenides on lanthanum-passivated sapphire
30天前
已完结
Modeling edge placement error performance of EUV and DSA multipatterning processes
1个月前
已完结
Rectification of extreme ultraviolet lithography patterns by directed self-assembly: a roughness and defectivity study
1个月前
已完结
Sub-stoichiometric zirconium oxide as a solution-processed dielectric for reconfigurable electronics
2个月前
已完结
A RISC-V 32-bit microprocessor based on two-dimensional semiconductors
4个月前
已完结
Etching scallop-less nano-TSV with F/O coupling plasma
1年前
已完结
Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating
1年前
已完结
Enabling Low-k Liner in Ultra-high Aspect Ratio TSVs by the Timing of Vacuum Treatment in the Vacuum-assisted Spin-coating Technique
1年前
已完结
Development of Cu Seed Layers in Ultra-High Aspect Ratio Through-Silicon-Vias (TSVs) with Small Diameters
1年前
已完结
PPA and Scaling Potential of Backside Power Options in N2 and A14 Nanosheet Technology
1年前
已完结
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