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14 积分 2025-04-10 加入
Highly sensitive infrared polarized photodetector enabled by out-of-plane PSN architecture composing of p-MoTe2, semimetal-MoTe2 and n-SnSe2
1天前
待确认
Two-dimensional gas of massless Dirac fermions in graphene
9天前
已完结
SnSe field-effect transistors with improved electrical properties
9天前
已完结
Boron nitride substrates for high-quality graphene electronics
9天前
已完结
Electric Field Effect in Atomically Thin Carbon Films
9天前
已完结
Layer dependent topological phases and transitions inTaRhTe4: From monolayer and bilayer to bulk
2个月前
已完结
Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics
9个月前
已完结
Two-dimensional indium selenide wafers for integrated electronics
10个月前
已完结
2D bismuth oxyselenide semiconductor for future electronics
10个月前
已完结
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