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179 积分 2021-07-02 加入
Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O2-Based Ferroelectric NVDRAM
20天前
已完结
Gate-All-Around Nanowire Field-Effect Transistors: A Historical Perspective
22天前
已完结
High Performance and Robust Oxide-Semiconductor Channel Transistor DRAM with Multi-tiered Architecture
27天前
已完结
First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, ION=1500 μA/μm@VDS=1V and Retention Time>300s
27天前
已完结
Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm
27天前
已完结
Oxide-Semiconductor Channel Transistor DRAM (OCTRAM) with 4F2 Architecture
27天前
已完结
Highly stackable Oxide-semiconductor Channel Transistor Technology for Future High-density and Low-power 3D DRAM
27天前
已完结
NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads
27天前
已完结
A-IGZO FETs with High Current and Remarkable Stability for Vertical Channel Transistor(VCT) / 3D DRAM Applications
27天前
已完结
High Bandwidth Memory for AI
27天前
已完结
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