Lv3
395 积分 2021-07-02 加入
Sidewall-Implanted Trench Termination for 4H-SiC Devices With High Breakdown Voltage and Low Leakage Current
10天前
已完结
Controlling the beam angle spread of carbon implantation for improvement of bin map defect in V-NAND flash memory
10天前
已完结
An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs
14天前
已完结
A Study on Floating Gate Profile Control and Reliability Improvement in Planar 1XNM Nand Flash
23天前
已完结
A Semiconductor Technology Road Map: Enabling Next-Gen Silicon Valley
30天前
已完结
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
30天前
已完结
Ferroelectric Materials and Their Applications for Next-Generation Integrated Devices
30天前
已完结
Investigations of NAND Flash Device Cycling Performance Improvement Via FG Carbon-Doped Polysilicon and Channel Corner Rounding
1个月前
已完结
Investigations of NAND Flash Device Cycling Performance Improvement Via FG Carbon-Doped Polysilicon and Channel Corner Rounding
1个月前
已完结
The SAS Implant Integration Optimization in the Cell Scaling of 4Xnm ETOX NOR Flash
2个月前
已完结
皖公网安备34019202002308
