Lv621
2730 积分 2024-03-22 加入
Worst-case bias during total dose irradiation of SOI transistors
1个月前
已完结
Heavy ion induced single-event-transient effects in nanoscale ferroelectric vertical tunneling transistors by TCAD simulation
2个月前
已完结
Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2
2个月前
已完结
Impacts of Zr content of HfZrOx-Based FeFET memory on resilience towards proton radiation
2个月前
已完结
Doped HfO2-based ferroelectric-aided charge-trapping effect in MFIS gate stack of FeFET
2个月前
已关闭
Polarization Switching and Charge Trapping in HfO2-Based Ferroelectric Transistors
2个月前
已完结
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors
2个月前
已完结
Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors
2个月前
已完结
Investigation of Radiation Effect on Ge P-Channel Ferroelectric FET Memory
2个月前
已完结
Accumulative total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET)
2个月前
已完结
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