Lv7
3610 积分 2024-03-22 加入
Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs
13小时前
已完结
The total ionizing dose response of leading-edge FDSOI MOSFETs
1天前
已完结
Worst-case bias during total dose irradiation of SOI transistors
4个月前
已完结
Heavy ion induced single-event-transient effects in nanoscale ferroelectric vertical tunneling transistors by TCAD simulation
5个月前
已完结
Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2
5个月前
已完结
Impacts of Zr content of HfZrOx-Based FeFET memory on resilience towards proton radiation
5个月前
已完结
Doped HfO2-based ferroelectric-aided charge-trapping effect in MFIS gate stack of FeFET
5个月前
已关闭
Polarization Switching and Charge Trapping in HfO2-Based Ferroelectric Transistors
5个月前
已完结
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors
5个月前
已完结
Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors
5个月前
已完结
皖公网安备34019202002308
