Lv41
710 积分 2022-03-02 加入
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
13天前
已完结
Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit
1个月前
已完结
Carbon nanotube radio-frequency electronics
1个月前
已完结
Two-dimensional Czochralski growth of single-crystal MoS2
1个月前
已完结
WSe2 pn Homojunction Photodetector Engineered by In Situ Ferroelectric Doping
1个月前
已完结
2D TMD‐Based Lateral Heterostructures: Preparation, Property, and Application
1个月前
已完结
Wafer-scale synthesis of transition metal dichalcogenides and van der Waals heterojunctions
1个月前
已完结
Large-Scale and Ultraclean Dry Transfer of Two-Dimensional Materials via Liquid Nitrogen-Assisted Cryogenic Exfoliation
1个月前
已完结
Tunable bilayer WS2-WSe2 and WS2-MoS2 lateral heterostructures for self-powered photodetectors
1个月前
已完结
Progress in the chemical vapor deposition of 2D transition metal dichalcogenides: toward structural and morphological engineering
1个月前
已完结