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890 积分 2025-10-15 加入
Mechanisms of nucleation, dislocation formation, and stress evolution during atomistic growth of SiC films on miscut 4H-SiC substrates
30天前
已完结
Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy
1个月前
已完结
Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(0001)
1个月前
已完结
Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion
1个月前
已完结
Dependence of thermal stability of GaN on substrate orientation and off-cut
1个月前
已完结
Reduction in surface defects on red-emitting InGaN quantum wells by using vicinal GaN (0001) surfaces
1个月前
已完结
Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates
1个月前
已完结
Origins of epitaxial macro-terraces and macro-steps on GaN substrates
1个月前
已完结
Dynamics of Atomic Steps on GaN (0001) during Vapor Phase Epitaxy
1个月前
已关闭
The effect of low-angle off-axis GaN substrate orientation on the surface morphology of Mg-doped GaN epilayers
1个月前
已完结
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