Lv41
750 积分 2025-10-15 加入
The influence of the substrate misorientation on the structural quality of GaN layers grown by HVPE
3天前
已完结
Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy
3天前
已完结
Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
3天前
已完结
Effect of H2 addition on growth rate and surface morphology of GaN(0001) grown by halide-vapor-phase epitaxy using GaCl3
3天前
已完结
Growth and impact of intrinsic interlayers in high temperature vapor phase epitaxy of GaN
7天前
已完结
Crystalline orientation and anisotropy of semi-polar GaN films grown on m-sapphire substrate by hydride vapor phase epitaxy
7天前
已完结
Role of carbon in n-type bulk GaN crystals
7天前
已完结
Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
7天前
已完结
Recent progress in HVPE-based GaN substrate fabrication
15天前
已关闭
Recent progress in HVPE-based GaN substrate fabrication
19天前
已关闭
皖公网安备34019202002308
