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10 积分 2026-05-01 加入
1.75-kV vertical β-Ga2O3 Schottky barrier diodes with room-temperature Ohmic contact formation by a thin ITO interlayer
12小时前
求助中
Implementation of source extended multiple field plates and asymmetric doping on β-Ga2O3 MOSFET for high power applications
13小时前
已完结
Demonstration of the normally off β -Ga2O3 MOSFET with high threshold voltage and high current density
14小时前
已完结
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