Lv1
36 积分 2025-06-17 加入
Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge
6小时前
已完结
Inkjet‐Printed Tungsten Oxide Memristor Displaying Non‐Volatile Memory and Neuromorphic Properties
6小时前
已完结
MnO/ZnO:Zn Thin-Film Frequency Adaptive Heterostructure for Future Sustainable Memristive Systems
6小时前
已完结
Bias‐Voltage Induced Transformation From Capacitive‐Coupled to Purely Resistive Switching Behavior in Ag/PVA‐Graphene Oxide/FTO Devices
1个月前
已完结
Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy
2个月前
已完结
Estimation of Number of Graphene Layers Using Different Methods: A Focused Review
2个月前
已完结
Cold Wall CVD (CWCVD) in the Synthesis of Few Layered Graphene on Ni
2个月前
已关闭
Review on role of nanoscale HfO2 switching material in resistive random access memory device
2个月前
已完结
Electroforming free enhanced resistive switching in reduced graphene oxide films embedded with silver nanoparticles for nonvolatile memory applications
4个月前
已完结
Interface-driven resistive switching and synaptic behavior in the graphene oxide-based memristive devices
4个月前
已关闭
皖公网安备34019202002308
