Lv11
46 积分 2025-06-17 加入
Bias‐Voltage Induced Transformation From Capacitive‐Coupled to Purely Resistive Switching Behavior in Ag/PVA‐Graphene Oxide/FTO Devices
3小时前
待确认
Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy
13天前
已完结
Estimation of Number of Graphene Layers Using Different Methods: A Focused Review
13天前
已完结
Cold Wall CVD (CWCVD) in the Synthesis of Few Layered Graphene on Ni
13天前
已关闭
Review on role of nanoscale HfO2 switching material in resistive random access memory device
16天前
已完结
Electroforming free enhanced resistive switching in reduced graphene oxide films embedded with silver nanoparticles for nonvolatile memory applications
2个月前
已完结
Interface-driven resistive switching and synaptic behavior in the graphene oxide-based memristive devices
2个月前
已关闭
Oxygen vacancy and Schottky barrier modulated clockwise resistive switching in Nd2-xCexCuO4 / Nb:SrTiO3 heterojunctions
3个月前
已完结
Defects in Two-Dimensional Materials
3个月前
已关闭
Current induced forces in graphene nanoribbons
3个月前
已完结
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