Lv11
10 积分 2021-12-23 加入
Demonstration of Wide Bandgap AlGaN/GaN Negative-Capacitance High-Electron-Mobility Transistors (NC-HEMTs) Using Barium Titanate Ferroelectric Gates
5小时前
待确认
From needs to goals and representations: Foundations for a unified theory of motivation, personality, and development
3个月前
已完结
中国婴幼儿排尿排便训练和尿不湿合理应用指南(2025版)
3个月前
已完结
中国婴幼儿排尿排便训练和尿不湿合理应用指南(2025版)
3个月前
已关闭
Suppression of Back-Gating Effect by Integrated Substrate Termination Network for 200V Monolithic GaN Half-Bridge Power IC
4个月前
已完结
Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure
4个月前
已完结
Polarization-Induced 2D Hole Gases in Undoped (In)GaN/AlN Heterostructures
4个月前
已完结
Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy
4个月前
已完结
Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination
4个月前
已完结
Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors
4个月前
已完结
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