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70 积分 2023-11-16 加入
 Junction Field‐Effect Transistors Based on PdSe2/MoS2 Heterostructures for Photodetectors Showing High Responsivity and Detectivity
                                            6小时前
                                            已完结
Junction Field‐Effect Transistors Based on PdSe2/MoS2 Heterostructures for Photodetectors Showing High Responsivity and Detectivity
                                            6小时前
                                            已完结
                                         Gate‐Tunable Photovoltaic Behavior and Polarized Image Sensor Based on All‐2D TaIrTe4/MoS2 Van Der Waals Schottky Diode
                                            15天前
                                            已完结
Gate‐Tunable Photovoltaic Behavior and Polarized Image Sensor Based on All‐2D TaIrTe4/MoS2 Van Der Waals Schottky Diode
                                            15天前
                                            已完结
                                         Flexible Linearly Polarized Photodetectors Based on All‐Inorganic Perovskite CsPbI3 Nanowires
                                            19天前
                                            已完结
Flexible Linearly Polarized Photodetectors Based on All‐Inorganic Perovskite CsPbI3 Nanowires
                                            19天前
                                            已完结
                                         Gate‐Tunable Photodiodes Based on Mixed‐Dimensional Te/MoTe2 Van der Waals Heterojunctions
                                            2个月前
                                            已完结
Gate‐Tunable Photodiodes Based on Mixed‐Dimensional Te/MoTe2 Van der Waals Heterojunctions
                                            2个月前
                                            已完结
                                         GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass
                                            2个月前
                                            已完结
GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass
                                            2个月前
                                            已完结
                                         Ambipolar 2D Semiconductors and Emerging Device Applications
                                            2个月前
                                            已完结
Ambipolar 2D Semiconductors and Emerging Device Applications
                                            2个月前
                                            已完结
                                         Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface
                                            2个月前
                                            已完结
Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface
                                            2个月前
                                            已完结
                                         Optical Properties of 2D Semiconductor WS2
                                            2个月前
                                            已完结
Optical Properties of 2D Semiconductor WS2
                                            2个月前
                                            已完结
                                         Two-dimensional polarized MoSSe/MoTe2 van der Waals heterostructure: A polarization-tunable optoelectronic material
                                            3个月前
                                            已完结
Two-dimensional polarized MoSSe/MoTe2 van der Waals heterostructure: A polarization-tunable optoelectronic material
                                            3个月前
                                            已完结
                                         Thickness‐Dependent, Gate‐Tunable Rectification and Highly Sensitive Photovoltaic Behavior of Heterostructured GeSe/WS2 p–n Diode
                                            3个月前
                                            已完结
Thickness‐Dependent, Gate‐Tunable Rectification and Highly Sensitive Photovoltaic Behavior of Heterostructured GeSe/WS2 p–n Diode
                                            3个月前
                                            已完结