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Low-Temperature Annealing in O2 to Annihilate the Fixed Charges in 4H-SiC/SiO2 Interface Induced by High-N-Density Nitridation Process
1天前
已完结
SiC Technology
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SiC Technology
1天前
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SiC Technology
1天前
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SiC Technology
1天前
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Oxygen diffusion kinetics during SiO2/SiC plasma oxidation
1个月前
已完结
SiC/SiO2 interface properties formed by low-temperature ozone re-oxidation annealing
1个月前
已完结
Opportunity to achieve an efficient SiC/SiO2 interface N passivation by tuning the simultaneous oxidation modes during the SiC surface nitridation in N2 + O2 annealing
1个月前
已完结
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