Lv3
380 积分 2025-04-16 加入
Properties of low-resistivity molybdenum metal thin film deposited by atomic layer deposition using MoO2Cl2 as precursor
23天前
已完结
Selective ALD Mo Deposition in 10nm Contacts
23天前
已完结
ALD Mo for Advanced MOL Local Interconnects
23天前
已完结
Barrierless ALD Molybdenum for Buried Power Rail and Via-to-Buried Power Rail metallization
23天前
已完结
Impact of Al-doping on Ferroelectricity and Reliability of HfZrO Film Under High Temperature Annealing
2个月前
已完结
Innovative DRAM Cell Featuring a Vertical Junctionless Pillar Access Transistor With a High Work-Function Molybdenum Nitride Metal Gate for Enhanced Performance and Efficiency
2个月前
已完结
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs
3个月前
已完结
Evaluation of vapor pressure of MoO2Cl2 and its initial chemical reaction on a SiO2 surface by ab initio thermodynamics
3个月前
已完结
High-Performance Gate-all-around Junctionless Vertical-Channel Transistors with the Ultra-low Sub-threshold Swing for Next-generation 4F2 DRAM
3个月前
已完结
Vertical Channel Transistor (VCT) as Access Transistor for Future 4F2 DRAM Architecture
3个月前
已完结