Lv1
38 积分 2025-12-11 加入
From architectures to device physics: Pathways to integrate lateral, vertical, and heterogeneous schemes in gallium oxide transistors
8小时前
待确认
Beyond a single mechanism: Uncovering the dual origin of degradation in β -Ga2O3 SBDs under forward bias stress
6个月前
已完结
Effect of Post-Annealing and Oxygen on the Properties of Sn-Doped β-Ga2O3 Thin Film
7个月前
已完结
Demonstration of β -Ga2O3 vertical Schottky barrier diode with mesa termination assisted partially suspended field plate on MOCVD-grown epitaxial wafer
8个月前
已完结
Ion energy dependence of dry etch damage depth in Ga2O3 Schottky rectifiers
8个月前
已完结
Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces
8个月前
已完结
Low-temperature supercritical fluid treatment for electrical performance restoration and enhancement in degraded β-Ga2O3-based diodes: Synergistic effects of trap passivation, interface optimization, and band structure modification
8个月前
已完结
Point defects induced work function modulation of β-Ga2O3
8个月前
已完结
Wet etch clean-up of plasma damage for 1.68 kV breakdown in NiO/β-Ga2O3 chlorine-etched PN diodes
8个月前
已关闭
Hysteresis-free and μs-switching of D/E-modes Ga2O3 hetero-junction FETs with the BV2/Ron,sp of 0.74/0.28 GW/cm2
8个月前
已完结
皖公网安备34019202002308
