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30 积分 2023-10-24 加入
Physical Origin of Hafnium-based Ferroelectricity
10小时前
待确认
Defect Engineering to Achieve Wake‐up Free HfO2‐Based Ferroelectrics
6天前
已完结
$\textit{C}$-Axis Oriented HZO on Flat Amorphous TiN Achieving High Uniformity, Breakdown Field, Final 2P$_{\text{r}}$, and Endurance
13天前
已完结
Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability
15天前
已完结
Atomic Layer Deposition of Gd-Doped HfO[sub 2] Thin Films
1个月前
已完结
Reduced Turn-On Voltage and Boosted Mobility in Monolayer WS2 Transistors by Mild Ar+ Plasma Treatment
1个月前
已完结
Performance and Stability Enhancement of Fully Solution-Processed a-InZnO Thin-Film Transistors via Argon Plasma Treatment
1个月前
已完结
Impact of Plasma Treatment on Reliability Performance for HfZrOx-Based Metal-Ferroelectric-Metal Capacitors
1个月前
已完结
Wake-Up Free La-Doped HfO2-ZrO2 Ferroelectrics Achieved With an Atomic Layer-Specific Doping Technique
1个月前
已完结
Wake-Up Free Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$ Ferroelectric Capacitor by Annealing and Inserting a Top Dielectric Layer
1个月前
已完结
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