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1220 积分 2024-09-19 加入
Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor
5个月前
已完结
Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications
5个月前
已完结
Vertical Channel-All-Around (CAA) IGZO FET with Recessed Source/Drain Structure to Improve Contact Characteristics
5个月前
已完结
A Simulation Comparison of Channel-All-Around and Gate-All-Around 3D Vertical Structure FeFET with IGZO Channel
5个月前
已完结
First Demonstration of 4-Layer Stacked Planar Channel-All-Around (P-CAA) IGZO FETs with Cost-Effective Process for High-Density 1T1C 3D DRAM
5个月前
已完结
Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application
5个月前
已完结
Inter-Layer Dielectric Engineering for Monolithic Stacking 4F2-2 T0C DRAM with Channel-All-Around (CAA) IGZO FET to Achieve Good Reliability (>104 s Bias Stress, >1012 Cycles Endurance)
5个月前
已完结
P‐265: Tailoring SS of a‐IGZO TFT through Defect Formation Mechanism during PEALD Deposition Sequences
9个月前
已完结
97‐3: Late‐News Paper: Enhanced IGZO TFT Performance with Atomic Layer Deposition Parameter Optimization for Large OLED Displays
9个月前
已完结
22‐2: Significant Improvement of a‐IGZO Source‐Gated Transistor Current over Traditional Design through Architecture Modification
10个月前
已完结
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