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SF6/O2 plasma for ICP/RIE SiC Etching
11小时前
待确认
A Modified Bosch Process of SF6/C4F8/O2 ICP-RIE Si Etching
1个月前
已完结
Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State
4个月前
已完结
The Rules of Standard Setting Organizations: An Empirical Analysis
5个月前
已完结
Helium Ion‐Assisted Wet Etching of Silicon Carbide with Extremely Low Roughness for High‐Quality Nanofabrication
6个月前
已完结
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