Lv11
60 积分 2025-04-16 加入
Achieving high carrier concentration β-Ga2O3 epilayers via MOCVD using SiCl4 as dopant
1小时前
待确认
Epilayer thickness effect on the electrical and breakdown characteristics of vertical β-Ga2O3 Schottky barrier diode
30天前
已完结
Comprehensive study of β-Ga2O3 epitaxial growth using a variable closed-coupled showerhead MOCVD reactor
2个月前
已完结
Two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition
2个月前
已完结
Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth
3个月前
已完结
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