Lv410
752 积分 2025-04-16 加入
Enhancing the quality of homoepitaxial (−201) β-Ga2O3 thin film by MOCVD with in situ pulsed indium
13天前
已完结
Unveiling the orientation growth mechanism and solar-blind response performance of β-Ga2O3 (100) film on SiC substrate with AlN buffer layer
1个月前
已完结
Effects of off-axis angles of 4H-SiC substrates on properties of β-Ga2O3 films grown by low-pressure chemical vapor deposition
1个月前
已完结
Phonon thermal transport and cooling limits in submicron heteroepitaxial β-Ga2O3 films on SiC
1个月前
已完结
Comprehensive study of β-Ga2O3 epitaxial growth using a variable closed-coupled showerhead MOCVD reactor
2个月前
已完结
Achieving high carrier concentration β-Ga2O3 epilayers via MOCVD using SiCl4 as dopant
2个月前
已完结
Epilayer thickness effect on the electrical and breakdown characteristics of vertical β-Ga2O3 Schottky barrier diode
3个月前
已完结
Comprehensive study of β-Ga2O3 epitaxial growth using a variable closed-coupled showerhead MOCVD reactor
5个月前
已完结
Two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition
5个月前
已完结
Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth
6个月前
已完结
皖公网安备34019202002308
