Lv11
20 积分 2025-07-04 加入
Effects of reaction temperature on the synthesis of high purity silicon carbide powder
21天前
已完结
High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate
21天前
已完结
Site-occupying behavior of boron in compensated p-type 4H–SiC grown by sublimation epitaxy
21天前
已完结
Refractive Index, Dispersion, and Birefringence of Silicon Carbide Polytypes
1个月前
已完结
Optical properties of 4H-SiC and 6H-SiC from infrared to vacuum ultraviolet spectral range ellipsometry (0.05–8.5 eV)
1个月前
已完结
Theory of shallow and deep boron defects in4H-SiC
1个月前
已完结
Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide
1个月前
已完结
Impurities and defects in 4H silicon carbide
1个月前
已完结
Optical characterization of n- and p-doped 4H–SiC by electroreflectance spectroscopy
1个月前
已完结
Double-Oxidant-Induced Slurry Reaction Mechanism and Performance on Chemical Mechanical Polishing of 4H-SiC (0001) Wafer
1个月前
已完结
皖公网安备34019202002308
