Lv51
1260 积分 2025-06-24 加入
AlGaN/GaN metal-insulator-semiconductor capacitors with a buried Mg doped layer characterized by deep level transient spectroscopy and photoluminescence
4个月前
已完结
Influence of traps on the gate reverse characteristics of normally-off high-electron-mobility transistors with regrown p-GaN gate
9个月前
已完结