Lv11
40 积分 2025-12-24 加入
First‐Principles Study of Schottky Barrier Heights on Metal/4H‐SiC Polar Interfaces
4小时前
已完结
“CharacterizationofThresholdVoltageShiftinSiCMOSFETsUnderNanosecond-RangeSwitchingandItsImpactonHigh-FrequencyApplications”
4小时前
待确认
Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs
4小时前
已完结
A Digital Real-Time Computation Algorithm Utilizing Time-Domain Analytic Model for Bidirectional CLLC Synchronous Rectifier in 6.6-kW 300-kHz SiC Portable EV Chargers
4小时前
已完结
High-temperature ultraviolet photodetector and amplifying integrated circuits based on AlGaN/GaN heterostructure
4小时前
已完结
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