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40 积分 2026-03-10 加入
Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires
2个月前
已完结
Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors
2个月前
已完结
Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors
2个月前
已完结
All-metal electrodes vertical gate-all-around device with self-catalyzed selective grown InAs NWs array
2个月前
已完结
The CMOS 2.0 revolution
2个月前
已完结