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Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications
12小时前
待确认
Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress
3个月前
已完结
High sensitivity x-ray detectors based on 4H-SiC p-i-n structure with 80μm thick intrinsic layer
4个月前
已完结
Single-Photon X-ray Detector Using AlGaN/GaN Heterostructure
4个月前
已关闭
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