Lv5
880 积分 2025-09-16 加入
MBE HgCdTe on Si and GaAs substrates
3个月前
已完结
Analysis of the nBn-type barrier structures for infrared photodiode detectors
3个月前
已完结
Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy
3个月前
已完结
HOT infrared detectors using MCT technology
3个月前
已完结
Growth and characterization of nBn structures based on CdxHg1–xTe for photodetectors in the 3–5 µm spectral range
3个月前
已关闭
II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays
3个月前
已完结
A New nBn IR Detection Concept Using HgCdTe Material
3个月前
已完结
Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors
3个月前
已完结
Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir
3个月前
已完结
A barrier structure optimization for widening processing window in dual-band HgCdTe IRFPAs detectors
3个月前
已完结
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