Lv2
102 积分 2025-10-13 加入
Ternary Devices Based on Partially Aligned MoS2/h‐BN/Graphene Heterostructures
5天前
已完结
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors
7天前
已完结
An Ultrafast Quasi‐Non‐Volatile Semi‐Floating Gate Memory with Low‐Power Optoelectronic Memory Application
7天前
已完结
AlGaN/GaN‐Based Optoelectronic Synaptic Devices for Neuromorphic Computing
21天前
已完结
Graphene/MoS2/Graphene Vertical Heterostructure‐Based Broadband Photodetector with High Performance
1个月前
已完结
Beyond Moore's law – A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics
2个月前
已完结
Robust room-temperature ferroelectricity in the wide-bandgap semiconductor Ga 2 O 3
3个月前
已完结
Four‐state memory based on ferroelectric tunnel junctions with double ferroelectric layers
6个月前
已完结
Engineering Ferroelectric‐/Ion‐Modulated Conductance in 2D vdW CuInP2S6 for Non‐Volatile Digital Memory and Artificial Synapse
6个月前
已完结