Lv6
2190 积分 2025-04-15 加入
A Sub-20 mV V TH Hysteresis Enhancement-mode GaN p -FET with PEALD AlON Gate Dielectric
2个月前
已完结
Proposal and Realization of Light-Emitting HEMT With InGaN Quantum Well Inserted
2个月前
已完结
All‐GaN‐Based Monolithic MIS‐HEMT Integrated Micro‐LED Pixels for Active‐Matrix Displays
2个月前
已完结
Monolithically Integrating GaN MicroLEDs on HEMTs With a New Approach for Lower On-Resistance
2个月前
已完结
Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices
2个月前
已完结
Characterization of AlGaN∕GaNp-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors
2个月前
已完结
Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application
2个月前
已完结
Thermal and microwave performance enhancement of AlGaN/GaN HEMT using an ultra-thin buffer on Si substrate for handset applications
4个月前
已完结
Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate
4个月前
已完结
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