Lv4
540 积分 2025-04-15 加入
Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer
5小时前
待确认
Island-ohmic-PGaN Gate HEMT: Toward Steep Subthreshold Swing and Enhanced Threshold Stability
5小时前
待确认
E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs
5小时前
待确认
Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering
6小时前
待确认
Challenges and advancements in p-GaN gate based high electron mobility transistors (HEMTs) on silicon substrates
6小时前
待确认
Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors
6小时前
待确认
Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate
6小时前
待确认
Wafer-scale high sensitive UV photodetectors based on novel AlGaN/n-GaN/p-GaN heterostructure HEMT
6小时前
待确认
Semiconductor Industry Outlook and New Technology Frontiers
5天前
已完结
Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates
6天前
已完结
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